Low-Temperature Annealing of CdZnTeSe under Bias

Autor
Datum vydání
2022Publikováno v
SensorsRočník / Číslo vydání
22 (1)ISBN / ISSN
ISSN: 1424-8220ISBN / ISSN
eISSN: 1424-8220Metadata
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Tato publikace má vydavatelskou verzi s DOI 10.3390/s22010171
Abstrakt
We performed a gradual low-temperature annealing up to 360 K on a CdZnTeSe radiation detector equipped with gold and indium electrodes under bias at both polarities. We observed significant changes in the detector's resistance and space-charge accumulation. This could potentially lead to the control and improvement of the electronic properties of the detector because the changes are accompanied with the reduction in the bulk dark current and surface leakage current. In this article, we present the results of a detailed study of the internal electric field and conductivity changes in CdZnTeSe detector for various annealing steps under bias taking into account different polarities during annealing and subsequent characterization. We observed that low-temperature annealing results in an increase in the barrier height at the contacts that, in general, reduces the dark current and decreases the positive space charge present in the sample compared to the pre-annealed condition.
Klíčová slova
CdZnTeSe, radiation detector, electrodes, low-temperature annealing, space charge
Trvalý odkaz
https://hdl.handle.net/20.500.14178/1861Licence
Licence pro užití plného textu výsledku: Creative Commons Uveďte původ 4.0 International